Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung-bum Hong, Sung-dong Kim, Ju-hwan Jung, Dong-ki Min, Hong-sik Park, Kyoung-lock Baeck, Chul-min Park, Yun-seok Kim
Estimating the term…
A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.
A method of writing data on a memory device comprising a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, the method comprising:
A method of writing data on a memory device comprising a resistive probe used for reading and writing data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, the method comprising:
A method of writing data on a memory device comprising a resistive probe used for reading and writing data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, the method comprising:
Dependencies are inferred from the claim text.