Nonvolatile semiconductor memory device having bitlines extending from cell array in single direction
AssigneeSamsung Electronics Co., Ltd.
InventorsWook-Ghee Hahn, Dae Seok Byeon
Life of this patent
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Abstract
A semiconductor memory device comprises a cell array including a plurality of memory cells. The semiconductor memory device further comprises a plurality of bitlines formed in a bit layer and connected to the plurality of memory cells, wherein the bitlines extend from the cell array along a single direction. A common source line is formed in a common source layer and adapted to provide a predetermined source voltage to the plurality of memory cells. A voltage control block comprising a plurality of voltage control circuits adapted to control the voltage levels of the plurality of bitlines through voltage supply lines formed in a voltage-line metal layer is formed on one side of the cell array.
Claims19
A nonvolatile semiconductor memory device, comprising:
- a cell array comprising a plurality of memory cells;
- a plurality of bitlines formed in a bit layer and connected to the plurality of memory cells, the bitlines extending from the cell array along a first direction;
- a common source line formed in a common source layer and adapted to provide a predetermined source voltage to the plurality of memory cells;
- and
- a voltage control block comprising a plurality of voltage control circuits adapted to control the voltage levels of the plurality of bitlines through voltage supply lines formed in a voltage-line metal layer;
- wherein the voltage control circuits are formed on only one side of the cell array.
A nonvolatile semiconductor memory device, comprising:
- a cell array comprising a plurality of memory cells;
- a plurality of bitlines formed in a bit layer and connected to the plurality of memory cells, the bitlines extending from the cell array along a first direction;
- a common source line formed in a common source layer and adapted to provide a predetermined source voltage to the plurality of memory cells;
- and
- a voltage control block comprising a plurality of voltage control circuits adapted to control the voltage levels of the plurality of bitlines through voltage supply lines formed in a voltage-line metal layer below the bit layer.
Dependencies are inferred from the claim text.