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US 7,405,962 B2Granted
Magnetic random access memory
AssigneeKabushiki Kaisha Toshiba
InventorTakeshi Kajiyama
Life of this patent
Estimating the term…
Abstract
MTJ elements are accumulated in a plurality of portions on a semiconductor substrate. A first conductive line functioning as a read line and extending in the X direction is connected to pin layers of the MTJ elements. A second conductive line functioning as a write line and read line and extending in the X direction is connected to free layers of the MTJ elements. A write line extends in the Y direction and is shared with two MTJ elements present above and below the write line. The two MTJ elements present above and below the write line are arranged symmetric to the write line.
Claims12
A magnetic random access memory comprising:
- a first array unit having a first magneto resistive element on a semiconductor substrate;
- a second array unit accumulated on the first array unit, the second array unit having a second magneto resistive element;
- and
- a first conductive line as a write line through which a write current flows in a write mode, which extends in a direction in which the first and second array units are accumulated, and which is adjacent to the first and second magneto resistive elements,
- wherein the first conductive line is connected to the first and second magneto resistive elements, and the first conductive line functions also as a read line through which a read current flows in a read mode.
2 more elements
Dependencies are inferred from the claim text.