Prober and probe contact method
AssigneeTokyo Seimitsu Co., Ltd.
InventorsTaichi Fujita, Takahiro Hokida, Tetsuo Hata, Satoshi Moriyama, Yoshiyuki Yokoyama
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AssigneeTokyo Seimitsu Co., Ltd.
InventorsTaichi Fujita, Takahiro Hokida, Tetsuo Hata, Satoshi Moriyama, Yoshiyuki Yokoyama
Estimating the term…
A prober that has improved positional precision of probing without reducing throughput is disclosed. The prober comprises a probe card having a probe, a wafer stage, a stage temperature adjustment mechanism, a wafer stage movement mechanism, a movement control section, and an alignment mechanism that detects the relative position between an electrode and the probe, wherein the movement control section controls the movement mechanism so as to cause the electrode to come into contact with the probe based on the detected relative position, and the prober further comprises a plurality of temperature sensors that detect the temperatures of a plurality of portions of the prober including the wafer stage and a predicted change amount calculation section that calculates the amount of change in relative position between the electrode and the probe based on a prediction model that uses at least part of the temperatures of the plurality of portions and the temperature difference between the wafer stage and the other sections as a variable.
A prober for connecting each terminal of a tester to an electrode of a semiconductor device in order to inspect the semiconductor device formed on a wafer with the tester, the prober comprising:
A probe contact method that makes a probe provided on a probe card of a prober come into contact with an electrode of a semiconductor device formed on a wafer held by a wafer stage, the method comprising:
Dependencies are inferred from the claim text.