High-k dielectric film, method of forming the same and related semiconductor device
AssigneeInfineon Technologies AG
InventorsKil-Ho Lee, Chan Lim
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Abstract
A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.
Claims11
A high-k dielectric film comprising:
- a metal-silicon-oxynitride bottom layer having a first nitrogen content and a first silicon content;
- and
- a metal-silicon-oxynitride top layer on the metal-silicon-oxynitride bottom layer, the metal-silicon-oxynitride top layer having a second nitrogen content and a second silicon content, the second nitrogen content higher than the first nitrogen content and the second silicon content higher than the first silicon content.
A semiconductor device comprising a substrate and a high-k dielectric film on the substrate, the high-k dielectric film comprising:
- a metal-silicon-oxynitride bottom layer having a first nitrogen content and a first silicon content;
- and
- a metal-silicon-oxynitride top layer on the metal-silicon-oxynitride bottom layer, the metal-silicon-oxynitride top layer having a second nitrogen content and a second silicon content, the second nitrogen content higher than the first nitrogen content and the second silicon content higher than the first silicon content.
Dependencies are inferred from the claim text.