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US 7,405,464 B2Granted
Array substrate, method of manufacturing the same and method of crystallizing silicon
AssigneeSamsung Electronics Co., Ltd.
InventorsSoong-Yong Joo, Myung-Koo Kang
Life of this patent
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Abstract
An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern having at least one block. Grains are formed in each of the at least one block that are extended in a plurality of directions. The pixel electrode is electrically connected to the switching element. Therefore, current mobility and design margin of the switching element are improved.
Claims14
An array substrate comprising:
- a base substrate;
- a switching element on the base substrate, the switching element including a poly silicon pattern including at least one block, each block including a plurality of grain regions, grains formed in different grain regions are extended in different directions, and grains formed within each grain region are extended in a same direction;
- and
- a pixel electrode electrically connected to the switching element.
1 more element
A poly silicon layer comprising:
- a plurality of blocks, each block having a substantially square shape;
- four grain regions within each block, each grain region having a substantially triangular shape;
- wherein first and third grain regions include grains extended in a transverse direction of a poly silicon layer, and second and fourth grain regions include grains extended in a longitudinal direction of the poly silicon layer, wherein the transverse direction of the poly silicon layer is substantially perpendicular to the longitudinal direction.
Dependencies are inferred from the claim text.