Gate dielectric antifuse circuit to protect a high-voltage transistor
AssigneeMicron Technology, Inc.
InventorsKenneth W. Marr, John D. Porter
Life of this patent
Estimating the term…
Abstract
According to embodiments of the present invention, circuits have elements to protect a high-voltage transistor in a gate dielectric antifuse circuit. An antifuse has a layer of gate dielectric between a first terminal coupled to receive an elevated voltage and a second terminal, and a high-voltage transistor is coupled to the antifuse and has a gate terminal. An intermediate voltage between the supply voltage and the elevated voltage is coupled to the gate terminal of the high-voltage transistor to protect the high-voltage transistor.
Claims20
An antifuse circuit, comprising:
- a bus;
- an antifuse including a first node connected to the bus;
- a transistor connected to the antifuse, the transistor including a gate;
- and
- a gate control circuit connected to the gate, wherein the gate control circuit includes a first impedance connected to the bus and the gate and a second impedance connected between a supply voltage and the gate.
An antifuse circuit, comprising:
- a bus;
- an antifuse including a first node connected to the bus;
- a high voltage, first transistor connected to the antifuse, the first transistor including a gate;
- a gate control circuit connected to the gate, wherein the gate control circuit includes a first impedance connected to the bus and the gate and a second impedance connected between a supply voltage and the gate;
- and
- a second transistor coupled to the high-voltage, first transistor to control current flowing through the antifuse and the high-voltage, first transistor.
An antifuse circuit, comprising:
- a bus;
- an antifuse including a first node connected to the bus;
- a high voltage, first transistor including a first source/drain connected to the antifuse, the first transistor including a gate;
- a gate control circuit connected to the gate, wherein the gate control circuit includes a first impedance connected to the bus and the gate and a second impedance connected between a supply voltage and the gate;
- and
- a read circuit coupled to the high-voltage transistor to read the antifuse during an active mode.
Dependencies are inferred from the claim text.