Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorAtsushi Yagishita
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Abstract
A semiconductor device includes a semiconductor substrate, and a MOS transistor provided on the semiconductor substrate and having a channel type of a first conductivity, the MOS transistor comprising a semiconductor region of the first conductivity type including first and second channel regions, gate insulating films provided on the first and second channel regions, a gate electrode provided on the gate insulating films, and first and second source/drain regions which are located at a distance from each other so as to sandwich the first and second channel regions, the first and second source/drain regions contacting the semiconductor region of the first conductivity type and forming a Schottky junction.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a MOS transistor provided on the semiconductor substrate and having a channel type of a first conductivity type,
- the MOS transistor comprising a semiconductor region of the first conductivity type including first and second channel regions of the first conductivity type, gate insulating films provided on the first and second channel regions, a gate electrode provided on the gate insulating films, and first and second source/drain regions which are located at a distance from each other so as to sandwich the first and second channel regions, the first and second source/drain regions contacting the semiconductor region of the first conductivity type and forming a Schottky junction,
- wherein the MOS transistor is configured to operate in an accumulation mode.
A method of manufacturing a semiconductor device comprising forming a MOS transistor having a channel type of a first conductivity type on a semiconductor substrate,
- the forming the MOS transistor comprising:
- forming first and second semiconductor regions to be first and second source/drain regions, and a semiconductor region of the first conductivity type including first and second channel regions of the first conductivity type, thereby configuring the MOS transistor to operate in an accumulation mode;
- forming a semiconductor film on the first and second channel regions via gate insulating films;
- and
- turning the first and second semiconductor regions and the semiconductor film into metal semiconductor compound regions including metal and semiconductor.
A method of manufacturing a semiconductor device comprising forming a MOS transistor having a channel type of a first conductivity type on a semiconductor substrate,
- the forming the MOS transistor comprising:
- forming first and second semiconductor regions to be first and second source/drain regions, and a semiconductor region of the first conductivity type including first and second channel regions of the first conductivity type, thereby configuring the MOS transistor to operate in an accumulation mode;
- forming a semiconductor film on the first and second channel regions via gate insulating films;
- and
- depositing a metal material on the first and second semiconductor regions and a region where the semiconductor film is removed.
Dependencies are inferred from the claim text.