Semiconductor device having a resistance for equalizing the current distribution
AssigneeMitsubishi Electric Corporation
InventorsMasuo Koga, Tetsuo Mizoshiri, Yukimasa Hayashida
Life of this patent
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Abstract
A first insulating substrate is formed on a heat sink, and a semiconductor element is formed thereon. An insulating resin casing is formed so as to cover the first insulating substrate and the semiconductor element. A second insulating substrate is mounted inside the insulating resin casing apart from the first insulating substrate. On the second insulating substrate, a resistance element that functions as a gate balance resistance is fixed by soldering. The second insulating substrate on which the resistance element was thus mounted was made apart from the first insulating substrate on which the semiconductor element was mounted, and was mounted on the side of the insulating resin casing.
Claims7
A semiconductor device comprising:
- a heat sink,
- a first insulating substrate formed on said heat sink in contact with said heat sink,
- a semiconductor element formed on said first insulating substrate,
- an insulating resin casing formed on said heat sink and surrounding said first insulating substrate and said semiconductor element,
- a second insulating substrate mounted inside said insulating resin casing apart from said heat sink and said first insulating substrate above said heat sink,
- a resistance element fixed on said second insulating substrate by soldering, and
- a wire electrically connecting said semiconductor element to said resistance element.
Dependencies are inferred from the claim text.