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US 7,405,446 B2Granted
Electrostatic protection systems and methods
AssigneeLattice Semiconductor Corporation
InventorsMoshe Agam, Rick Smoak, Mayank Gupta
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Abstract
Systems and methods are disclosed herein to provide improved electrostatic protection for electrical circuits. For example, in accordance with an embodiment of the present invention, an electrostatic protection device includes: a drain region formed in a substrate; a gate separated from the substrate by a gate oxide; and an isolation region formed in the substrate, the isolation region being adapted to isolate the gate oxide from a DC voltage coupled to the drain region.
Claims11
An electrostatic protection device comprising:
- a drain region formed in a substrate;
- a gate separated from the substrate by a gate oxide;
- and
- a shallow trench isolation region formed in the substrate and adjacent to the drain region, the isolation region being adapted to isolate the gate oxide from a DC voltage coupled to the drain region, wherein the isolation region does not extend under the gate.
1 more element
An electrostatic protection device comprising:
- a drain region formed in a substrate;
- a gate separated from the substrate by a gate oxide;
- and
- a shallow trench isolation region formed in the substrate and adjacent to the drain region, the isolation region being adapted to isolate the gate oxide from a DC voltage coupled to the drain region, wherein the isolation region does not extend under the gate and is between the drain region and the gate oxide.
1 more element
Dependencies are inferred from the claim text.