US 7,405,438 B2 · Capacitor constructions and semiconductor structures

Abstract

The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.

Claims6

Dependent claims

A capacitor construction, comprising:

a first capacitor electrode, the first capacitor electrode including a stack comprising at least three semiconductor layers, two of the three semiconductor layers being adjacent one another;
a bottom of the stack being conductively-doped semiconductor material and an outer surface of the stack being a rugged semiconductor surface, there being an interface layer in the stack, the interface layer being between the adjacent semiconductor layers;
wherein the conductively-doped semiconductor material of the bottom of the stack does not directly contact the rugged semiconductor outer surface of the stack;
at least one dielectric material over the first capacitor electrode;
and
a second capacitor electrode over the at least one dielectric material.

3 more elements

Dependencies are inferred from the claim text.

Capacitor constructions and semiconductor structures

Life of this patent

Capacitor constructions and semiconductor structures

Life of this patent

Abstract

Claims6