US 7,405,425 B2Granted

Thin film transistor, method of manufacturing the same, display apparatus having the same and method of manufacturing the display apparatus

AssigneeSamsung Electronics Co., Ltd.

InventorsSang-Gab Kim, Shi-Yul Kim, Hong-Sick Park, Hee-Hwan Choe, Hong-Kee Chin, Min-Seok Oh

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Abstract

A thin film transistor includes a gate electrode on a substrate, a gate insulating layer on the substrate, a channel pattern, a source electrode and a drain electrode. The channel pattern includes a semiconductor pattern formed on the gate electrode and overlaying the gate electrode as well as first and second conductive adhesive patterns formed on the semiconductor pattern and spaced apart from each other. The source electrode includes a first barrier pattern, a source pattern and a first capping pattern sequentially formed on the first conductive adhesive pattern. The drain electrode includes a second barrier pattern, a drain pattern and a second capping pattern sequentially formed on the second conductive adhesive pattern. Etched portions of the first and second conductive adhesive patterns have a substantially vertical profile to prevent the exposure of the source and drain electrodes, thereby improving the characteristics of the thin film transistor.

Claims10

Dependent claims

A thin film transistor comprising:

a gate electrode on a substrate;
a gate insulating layer on the substrate to insulate the gate electrode;
a channel pattern including:
a semiconductor pattern on the gate electrode such that the semiconductor pattern overlays the gate electrode;
a first conductive adhesive pattern on the semiconductor pattern;
and
a second conductive adhesive pattern formed on the semiconductor pattern and spaced apart from the first conductive adhesive pattern;
a source electrode having a first barrier pattern, a source pattern and a first capping pattern sequentially formed on the first conductive adhesive pattern;
and
a drain electrode having a second barrier pattern, a drain pattern and a second capping pattern sequentially formed on the second conductive adhesive pattern;
wherein each of end portions of the first capping pattern, the second capping pattern, the source pattern and the drain pattern comprises a tapered structure;
the source and the drain patterns comprise a metal selected from the group consisting of aluminum, an aluminum alloy, copper, and a copper alloy;
and
the first and second barrier patterns comprise a metal different from that of the first and second capping patterns.

11 more elements

Dependencies are inferred from the claim text.

Facts

Application: 11/232,306Filed 20 Sep 2005
Priority: KR 10-2004-01032218 Dec 2004
Published: US 2006/0118786 A18 Jun 2006
Granted: 29 Jul 2008
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 30/0316
Characterised by the gate electrodes: of lateral bottom-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
H10D 30/6737
Characterised by the electrodes: characterised by the electrode materials
H10D 30/6743
Group IV materials, e.g. germanium or silicon carbide: silicon