US 7,405,424 B2 · Electronic device and methods for fabricating an electronic device

Abstract

An electronic device and a method of fabricating the electronic device includes forming a first electrical contact, a dielectric layer and a second electrical contact wherein the dielectric layer is located between the first and the second electrical contacts, forming an electrically insulating layer over the dielectric layer and the first electrical contact, exposing the first and second electrical contact, the dielectric layer and a first portion of the electrically insulating layer to radiation from the side of the first electrical contact, removing a second portion of the electrically insulating layer that was not irradiated by the radiation, providing a semiconductor material over a portion of the dielectric layer, and forming at least a third electrical contact over at least a portion of the electrically insulting layer and the semiconductor material.

Claims14

Dependent claims

An electronic device, comprising:

a first electrical contact layer;
a dielectric layer located over the first electrical contact layer;
a second electrical contact layer located over the dielectric layer;
a semiconducting layer located over the second electrical contact layer;
and
a third electrical contact layer located over the semiconducting layer,
a first electrically insulating layer portion over the dielectric layer and not in contact with the third electrical contact layer;
and
a fourth electrical contact layer over a second insulating layer portion and electrically connected to the third electrical contact layer, wherein
an electrical current between the second and third electrical contact layers is controlled by the first electrical contact layer, wherein the semiconductor layer separates the second electrical contact layer from the third electrical contact layer.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/071,305Filed 4 Mar 2005 · division

Priority

19 Dec 2003

Published

US 2005/0133788 A122 Sep 2005

Granted

29 Jul 2008

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10K 10/466
Insulated gate field-effect transistors [IGFETs]: lateral bottom-gate IGFETs comprising only a single gate
H10D 30/6729
Thin-film transistors [TFT]: characterised by the electrodes
H10K 71/60
Manufacture or treatment specially adapted for the organic devices covered by this subclass: forming conductive regions or layers, e.g. electrodes
H10K 10/491
Insulated gate field-effect transistors [IGFETs]: vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]

Electronic device and methods for fabricating an electronic device

Life of this patent

Electronic device and methods for fabricating an electronic device

Life of this patent

Abstract

Claims14