Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD

A layered structure comprising:

• a substrate having an upper surface of single crystalline Si, and
• a multitude of single crystal layers of materials selected from the group consisting of Si, SiGe, SiC, and SiGeC over said upper surface, said Si/SiC, Si/SiGeC, SiGe/SiC and SiGe/SiGeC layer interfaces having an abrupt change in C concentration above 1×1018 atoms/cc over a layer thickness in the range from about 6 Angstroms to about 60 Angstrom, wherein the oxygen in said carbon containing layer is less than 1×1017 atoms/cc, and with the proviso that when said carbon containing layers include a p-type dopant, said p-type dopant is in the range from about 1×1018 to about 1×1021 atoms/cc and wherein said p-type dopant profile can withstand furnace anneals to temperatures of 850° C. and rapid thermal anneal temperatures to 1000° C., or when said said carbon containing layers include a n-type dopant, the n-type dopant is in the range from about 1 ×1018 to about 1×1021 atoms/cc.