Methods for depositing tungsten layers employing atomic layer deposition techniques

A method for forming a tungsten-containing material on a substrate, comprising:

• positioning a substrate within a process chamber;
• exposing the substrate to a reducing gas to form a first reducing agent layer on the substrate during a pre-soak process;
• depositing a nucleation layer over the substrate by sequentially exposing the substrate to a tungsten-containing precursor and a reductant during an atomic layer deposition process;
• exposing the substrate to the reducing gas to form a second reducing agent layer on the nucleation layer during a second soak process;
• and
• depositing a bulk layer over the second reducing agent layer.

A method for forming a tungsten-containing material on a substrate, comprising:

• positioning a substrate containing a barrier layer disposed thereon within a process chamber;
• exposing the substrate to a reducing gas during a first soak process;
• depositing a nucleation layer over the barrier layer by a pulsed chemical vapor deposition process or an atomic layer deposition process;
• exposing the nucleation layer to the reducing gas during a second soak process;
• and
• depositing a bulk layer over the nucleation layer by a chemical vapor deposition process.

A method for forming a tungsten-containing material on a substrate, comprising:

• positioning a substrate containing a barrier layer disposed thereon within a process chamber, wherein the barrier layer comprises tungsten;
• exposing the substrate to a reducing gas during a first soak process;
• depositing a first nucleation layer over the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber;
• depositing a second nucleation layer over the first nucleation layer;
• depositing a bulk layer over the second nucleation layer;
• and
• exposing the first nucleation layer or the second nucleation layer to the reducing gas to form a reducing agent layer during a second soak process.

A method for forming a tungsten-containing material on a substrate, comprising:

• positioning a substrate containing a barrier layer disposed thereon within a process chamber, wherein the barrier layer comprises a combination film of tungsten and tungsten nitride;
• exposing the substrate to a reducing gas to form a first reducing agent layer on the barrier layer during a first soak process;
• and
• depositing a nucleation layer over the barrier layer by sequentially exposing the substrate to a tungsten-containing precursor and a reagent during an atomic layer deposition process;
• and
• exposing the substrate to the reducing gas to form a second reducing agent layer on the nucleation layer during a second soak process.