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US 7,405,151 B2Granted
Method for forming a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGin Jei Wang, Chao-Hsien Peng, Chii-Ming Wu, Chih-Wei Chang, Shau-Lin Shue
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Abstract
A method for forming a semiconductor device is described. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 Å. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.
Claims10
A method for forming a semiconductor device, comprising:
- providing a substrate with at least one transistor covered by a first dielectric layer, wherein the first dielectric layer comprises phosphorous-containing dielectric;
- forming a first opening in the first dielectric layer, exposing an active region of the transistor;
- conformably forming a first TaN barrier at a thickness less 20Å in the first opening by atomic layer deposition (ALD);
- and
- forming a copper layer over the first TaN barrier layer, filling the first opening.
2 more elements
Dependencies are inferred from the claim text.