Low temperature formation of patterned epitaxial Si containing films
AssigneeTokyo Electron Limited
InventorsAnthony Dip, Allen John Leith, Seungho Oh
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Abstract
A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patterned film area thereon. A Si film is non-selectively deposited onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film. The non-epitaxial Si film is selectively dry etched away to form a patterned epitaxial Si film. The Si film may be a SiGe film.
Claims26
A method of processing a semiconductor structure, comprising:
- providing the structure in a process chamber, the structure comprising a Si substrate having an epitaxial Si surface area and a patterned film area thereon;
- non-selectively depositing a Si film onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film;
- selectively dry etching away the non-epitaxial Si film to form a patterned epitaxial Si film;
- and
- removing the patterned film from the structure in an etching process.
A method of processing a semiconductor structure, comprising:
- providing the structure in a process chamber, the structure comprising a substrate having an epitaxial SiGe surface area and a patterned film area thereon;
- non-selectively depositing a SiGe film onto the structure, the SiGe film comprising an epitaxial SiGe film deposited onto the epitaxial SiGe surface and a non-epitaxial SiGe film deposited onto an exposed surface of the patterned film;
- selectively dry etching away the non-epitaxial SiGe film to form a patterned epitaxial SiGe film;
- and
- removing the patterned film from the structure in an etching process.
A method of forming a semiconductor device, comprising:
- providing a semiconductor structure in a process chamber, the structure comprising a Si substrate having an epitaxial Si surface area and a patterned film area thereon;
- removing an oxide layer from the substrate to reveal an epitaxial Si surface;
- non-selectively depositing a Si film onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film;
- selectively dry etching away the non-epitaxial Si film to form a patterned epitaxial Si film comprising raised Si source/drain regions;
- and
- removing the patterned film from the structure in an etching process.
Dependencies are inferred from the claim text.