Manufacturing method of stack-type semiconductor device

A manufacturing method for a stack type semiconductor device, the semiconductor device including

• a semiconductor element having plural electrodes on a circuit forming surface,
• a wiring formed at least on said circuit forming surface and having one end connected to said electrodes,
• a bump electrode connected to said wiring,
• a sealing resin that exposes a surface of said bump electrode and that seals the circuit forming surface of said semiconductor element, and
• a ball electrode formed on the surface of said bump electrode exposed from said sealing resin,
• wherein a part of said wiring is formed also at a side surface of said semiconductor element, and said bump electrode is formed so that a side surface of the bump electrode is substantially flush with said wiring formed at the side surface of said semiconductor element,
• at least a part of said ball electrode is formed so as to be electrically connected to said wiring at the side surface of said semiconductor element, and
• the side surface of said semiconductor element is sealed with the sealing resin exposing said wiring, and a confronting surface of said semiconductor element that is opposite the circuit forming surface is sealed with the sealing resin on an entire surface thereof,
• the manufacturing method comprising:
• mounting the semiconductor device on a second semiconductor device having ball electrodes with the confronting surface of the semiconductor element as a contact surface, whereby said ball electrodes of said second semiconductor device and the wiring formed at the side surface of the semiconductor device are at substantially same positions, and
• heating the second semiconductor device at a specified temperature, to connect the bump electrode of the semiconductor device and the wiring formed at the side surface of the semiconductor device to the second semiconductor device through said ball electrodes.

A manufacturing method for a stack type semiconductor device, the semiconductor device including

• a semiconductor element having plural electrodes on a circuit forming surface,
• a wiring formed at least on said circuit forming surface and having one end connected to said electrodes,
• a bump electrode connected to said wiring,
• a sealing resin that exposes a surface of said bump electrode and that seals the circuit forming surface of said semiconductor element, and
• a ball electrode formed on the surface of said bump electrode exposed from said sealing resin,
• wherein a part of said wiring is formed also at a side surface of said semiconductor element, and said bump electrode is formed so that a side surface of the bump electrode is substantially flush with said wiring formed at the side surface of said semiconductor element,
• at least a part of said ball electrode is formed so as to be electrically connected to said wiring at the side surface of said semiconductor element, and
• the side surface of said semiconductor element is sealed with the sealing resin exposing said wiring, and a confronting surface of said semiconductor element that is opposite the circuit forming surface is sealed with the sealing resin on an entire surface thereof,
• the manufacturing method comprising:
• mounting the semiconductor device on a second semiconductor device having ball electrodes with the confronting surface of the semiconductor element as a contact surface, whereby said ball electrodes of said second semiconductor device and the wiring formed at the side surface of the semiconductor device are at substantially same positions,
• mounting an additional one or two or more of the semiconductor devices, with the confronting surface as a contact surface, so that additional ball electrodes of said second semiconductor device and the wirings formed at the side surface of the additional semiconductor devices are at substantially same positions, and
• heating the second semiconductor device at a specified temperature, to connect the bump electrodes of the semiconductor devices and the wirings formed at the side surfaces of the semiconductor devices to the second semiconductor device through said ball electrodes.

A manufacturing method for a stack type semiconductor device, the semiconductor device including

• a semiconductor element having plural electrodes on a circuit forming surface,
• a wiring formed at least on said circuit forming surface and having one end connected to said electrodes,
• a bump electrode connected to said wiring,
• a sealing resin that exposes a surface of said bump electrode and that seals the circuit forming surface of said semiconductor element, and
• a ball electrode formed on the surface of said bump electrode exposed from said sealing resin,
• wherein a part of said wiring is formed also at a side surface of said semiconductor element, and said bump electrode is formed so that a side surface of the bump electrode is substantially flush with said wiring formed at the side surface of said semiconductor element,
• at least a part of said ball electrode is formed so as to be electrically connected to said wiring at the side surface of said semiconductor element, and
• the side surface of said semiconductor element is sealed with the sealing resin exposing said wiring, and a confronting surface of said semiconductor element that is opposite the circuit forming surface is sealed with the sealing resin on an entire surface thereof,
• the manufacturing method comprising:
• mounting the semiconductor device on a second semiconductor device having ball electrodes with the confronting surface of the semiconductor element as a contact surface, whereby said ball electrodes of said second semiconductor device and the wiring formed at the side surface of the semiconductor device are at substantially same positions,
• mounting one or two or more semiconductor devices, or other semiconductor devices each comprising a first semiconductor element having first plural electrodes on a first circuit forming surface, a first wiring formed at least on said first circuit forming surface and having one end connected to said first electrodes, a first bump electrode connected to said first wiring, a first sealing resin that exposes a surface of said first bump electrode and that seals the first circuit forming surface of said first semiconductor element, and a first ball electrode formed on the surface of said first bump electrode exposed from said first resin, in which a part of said first wiring is formed also at a side surface of said first semiconductor element, and said first bump electrode is formed so that a side surface of the first bump electrode is substantially flush with said first wiring formed at the side surface of said first semiconductor element, at least a part of said first ball electrode is formed so as to be electrically connected to said first wiring at the side surface of said first semiconductor element, and the side surface of said first semiconductor element is sealed with the first sealing resin exposing said first wiring, and a confronting surface of said first semiconductor element that is opposite the first circuit forming surface is sealed with the first sealing resin on an other surface than the end surface of the first wiring formed at the side surface of the first semiconductor element, with the first confronting surface of the first circuit forming surface as a contact surface, whereby said ball electrodes of said second semiconductor element and the first wirings formed at the side surface of the other semiconductor devices are at substantially same positions, and
• heating the second semiconductor device at a specified temperature, to connect the bump electrodes of the semiconductor devices and the wirings formed at the side surfaces of the semiconductor devices to the second semiconductor device through said ball electrodes.