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US 7,405,135 B2Granted
Substrate for stressed systems and method of making same
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsFabrice Letertre, Bruno Ghyselen, Olivier Rayssac
Life of this patent
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Abstract
A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.
Claims19
A method of forming thick epitaxial layers which comprises the following steps:
- providing a microstructure that comprises a support substrate, a transferred nucleation layer on the support substrate, and a mechanical stress absorbing system associated with the support substrate;
- and
- forming an epitaxial layer on the nucleation layer to form a structure comprising the support substrate, the nucleation layer, the mechanical stress absorbing system and the epitaxial layer.
Dependencies are inferred from the claim text.