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US 7,405,134 B2Granted
Method of manufacturing a semiconductor device and electronic equipment
AssigneeSeiko Epson Corporation
InventorsIchio Yudasaka, Hideki Tanaka
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Abstract
Exemplary embodiments of the present invention provide a method of manufacturing a semiconductor device that can take a connection between layers without giving damage to a layer, which is underlying. The semiconductor device includes forming conductive members Ms and Md at a predetermined position of a semiconductor film, forming an insulating film on a whole surface of a substrate excluding the conductive members Ms and Md, and forming a conductive film that is connected to the semiconductor film with the conductive member Ms and Md.
Claims16
A method of manufacturing a semiconductor device, comprising:
- forming a conductive pillar on a portion of a first semiconductor film;
- forming a gate insulating film over the first semiconductor film to a protruding portion of the conductive pillar, a part of the conductive pillar protrudes from the gate insulating film;
- and
- forming a conductive film over the gate insulating film;
- and
- forming a gate wiring and an intermediate electrode by patterning the conductive film using the conductive pillar as an alignment mark, the intermediate electrode being attached to at least a side part of the protruding portion of the conductive pillar.
3 more elements
Dependencies are inferred from the claim text.