Memory device with quantum dot and method for manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsWon-bong Choi, Soo-doo Chae
Life of this patent
Estimating the term…
Abstract
Provided is a memory device formed using quantum devices and a method for manufacturing the same. A memory device includes a substrate; a source region and a drain region formed in the substrate so as to be separated from each other by a predetermined interval. A memory cell is formed on the surface of the substrate to connect the source region and the drain region, and has a plurality of nano-sized quantum dots filled with material for storing electrons. A control gate is formed on the memory cell and controls the number of electrons stored in the memory cell. It is possible to embody a highly efficient and highly integrated memory device by providing a memory device having nano-sized quantum dots and a method for manufacturing the same.
Claims18
A method for manufacturing a memory device, comprising:
- forming a storage layer on a substrate;
- forming a porous storage layer by forming a plurality of holes by oxidizing the storage layer;
- depositing a material for storing electrons inside the holes;
- etching and planarizing the porous storage layer;
- forming an insulating layer on a surface of the planarized storage layer;
- forming a control gate on the insulating layer;
- and
- forming a source region and a drain region on both sides of the porous storage layer on a surface of the substrate, wherein the source and drain regions are separated by predetermined intervals.
Dependencies are inferred from the claim text.