Tunnel oxynitride in flash memories
AssigneeMacronix International Co., Ltd.
InventorSzu-Yu Wang
Life of this patent
Estimating the term…
Abstract
Methods for forming a tunnel oxide structure device and methods for forming the structure are described. A structure comprising nitrogen is formed on a semiconductor substrate. The structure is oxidized. Nitrogen of the oxide structure is redistributed to form a region of concentrated nitrogen. Oxidizing the structure and redistributing the nitrogen is performed via radical oxidation. Nitrogen is added to the oxide structure. The region of concentrated nitrogen helps to regulate the depth of the added nitrogen.
Claims41
A method for manufacturing a semiconductor, comprising:
- forming a structure comprising nitrogen on a surface of a semiconductor substrate;
- oxidizing the structure to provide a nitrogen containing oxide structure;
- redistributing nitrogen of the oxide structure to form a region of concentrated nitrogen in the oxide structure;
- and
- after forming the region of concentrated nitrogen, adding nitrogen to at least a portion of the oxide structure at a range of depths shallower than the region of concentrated nitrogen.
A method for manufacturing a semiconductor, comprising:
- forming a structure comprising nitrogen on a surface of a semiconductor substrate,
- wherein said forming includes thermally annealing the surface of the semiconductor substrate in the presence of ND3;
- performing radical oxidization of the structure to provide a nitrogen containing oxide structure;
- and
- adding nitrogen to at least a portion of the oxide structure.
Dependencies are inferred from the claim text.