Method of forming a gate insulator and thin film transistor incorporating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHo-nyeon Lee, Ick-hwan Ko
Life of this patent
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Abstract
Disclosed herein is a method of manufacturing a gate insulator and a thin film transistor (“TFT”) incorporating the gate insulator, including forming an oxygen-containing, conductive gate on a substrate; forming a gate insulator material layer on the substrate so as to cover the gate; and applying a heat treatment so as to diffuse oxygen from the oxygen-containing gate layer into the gate insulating material layer thereby forming the gate insulator.
Claims20
A method of forming a gate insulator for a thin film transistor (TFT), the method comprising:
- forming an oxygen-containing, conductive gate material on a substrate;
- forming a gate insulator material layer on the substrate so as to cover the oxygen-containing gate material;
- and
- applying a heat treatment so as to diffuse oxygen from the oxygen-containing gate layer into the gate insulator material layer, thereby forming the gate insulator.
A method of forming a thin film transistor (TFT), the method comprising:
- forming an oxygen-containing, conductive gate on a substrate;
- forming a gate insulator material layer over the gate;
- applying a heat treatment so as to diffuse oxygen from the oxygen-containing gate layer into the gate insulator material layer, thereby forming a gate insulator;
- and
- forming a semiconductor layer on the gate and forming a source electrode and a drain electrode in contact with opposing sides of the semiconductor layer.
A method of forming an organic light emitting diode (OLED), the method comprising:
- forming an oxygen-containing, conductive gate on a substrate;
- forming a gate insulator material layer over the gate;
- applying a heat treatment so as to diffuse oxygen from the oxygen-containing gate layer into the gate insulator material layer, thereby forming a gate insulator;
- forming a semiconductor layer on the gate and forming a source electrode and a drain electrode in contact with opposing sides of the semiconductor layer;
- forming a passivation layer over the substrate, semiconductor layer, source electrode, and drain electrode;
- forming a via through the passivation layer to expose the drain electrode and forming an anode on the passivation layer, the anode electrically connected to the drain electrode through the via;
- forming a barrier on opposite sides of the anode so as to enclose an area of the anode and define a light emission layer;
- forming a hole injection layer (HIL) on the anode and an emission layer (EML) on the HIL;
- and
- forming a cathode on the barrier and the EML.
Dependencies are inferred from the claim text.