Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hideomi Suzawa, Yoshihiro Kusuyama, Koji Ono, Jun Koyama
Life of this patent
Estimating the term…
Abstract
There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more.
Claims21
A method of manufacturing a semiconductor device comprising the steps of:
- forming a silicon nitride film having a film thickness of 10 nm or less over a substrate;
- forming an amorphous semiconductor film on the silicon nitride film;
- providing the amorphous semiconductor film with a metal element;
- crystallizing the amorphous semiconductor film to form a crystalline semiconductor film;
- reducing a concentration of the metal element in the crystalline semiconductor film,
- forming a gate insulating film over the crystalline semiconductor film;
- forming a laminate film of a first conductive layer on the gate insulating film and a second conductive layer on the first conductive layer;
- and
- etching the laminate film to form a gate electrode,
- wherein the first conductive layer comprises a first material mainly containing tantalum nitride, and
- wherein the second conductive layer comprise a second material having a resistance that is lower than that of the first material.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a silicon nitride film having a film thickness of 10 nm or less over a substrate;
- forming an amorphous semiconductor film on the silicon nitride film;
- providing the amorphous semiconductor film with a metal element;
- crystallizing the amorphous semiconductor film to form a crystalline semiconductor film;
- reducing a concentration of the metal element in the crystalline semiconductor film;
- forming a gate insulating film over the crystalline semiconductor film;
- forming a laminated film of a first conductive layer on the gate insulating film, a second conductive layer on the first conductive layer, and a third conductive layer on the second conductive layer;
- and
- etching the laminated film to form a gate electrode,
- wherein the first conductive layer comprises a first material mainly containing tantalum nitride, and
- wherein the second conductive layer comprise a second material having a resistance that is lower than that of the first material, and
- wherein the third conductive layer comprise a third material having a contact resistance that is lower than that of the second material.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a silicon nitride film having a film thickness of 10 nm or less over a substrate;
- forming an amorphous semiconductor film on the silicon nitride film;
- providing the amorphous semiconductor film with a metal element;
- crystallizing the amorphous semiconductor film to form a crystalline semiconductor film;
- reducing a concentration of the metal element in the crystalline semiconductor film;
- forming a gate insulating film over the crystalline semiconductor film;
- forming a laminate film of a first conductive layer on the gate insulating film and a second conductive layer on the first conductive layer;
- etching the laminate film to form a gate electrode;
- adding an impurity element for providing an n-type to the crystalline semiconductor film using the gate electrode as a mask,
- wherein the first conductive layer comprises a first material mainly containing tantalum nitride, and
- wherein the second conductive layer comprise a second material having a resistance that is lower than that of the first material.
Dependencies are inferred from the claim text.