Laser irradiation apparatus and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising the steps of:

• processing a laser beam outputted from a laser oscillator in order to shape a beam spot into a linear shape or an elliptical shape;
• controlling a branching ratio of polarization of the processed laser beam;
• transmitting a laser beam having a polarized direction through an optical system depending on the polarization direction after controlling the branching ratio of polarization of the processed laser beam;
• deflecting the transmitted laser beam toward a surface of a semiconductor film;
• and
• scanning the deflected laser beam through an f-θ lens to the semiconductor film,
• wherein the control of the branching ratio of polarization offsets a difference in beam energy distribution associated with the scanning of the deflected laser beam on the surface of the semiconductor film.

A method of manufacturing a semiconductor device, comprising the steps of:

• processing a laser beam outputted from a laser oscillator in order to shape a beam spot into a linear shape or an elliptical shape;
• controlling a branching ratio of polarization of the processed laser beam;
• transmitting a laser beam having a polarized direction through an optical system depending on the polarization direction after controlling the branching ratio of polarization of the processed laser beam;
• deflecting the transmitted laser beam toward a surface of a semiconductor film;
• and
• scanning the deflected laser beam through an f-θ lens to the semiconductor film,
• wherein the control of the branching ratio of polarization offsets a difference in beam energy distribution, the difference being caused by a position of the laser beam incident on the f-θ lens.