CMOS image sensor and method for manufacturing the same
AssigneeDongbu Electronics Co., Ltd.
InventorChang Hun Han
Life of this patent
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Abstract
A CMOS image sensor and a method for manufacturing the same are disclosed, in which a blue photodiode is imparted with a greater thickness to improve sensitivity of blue light. The blue photodiode of a CMOS image sensor includes a first lightly doped P-type epitaxial layer formed on a heavily doped P-type semiconductor substrate; a gate electrode of a transfer transistor formed on the first epitaxial layer; a first N-type blue photodiode region formed on the first epitaxial layer; and a second N-type blue photodiode region formed on the first epitaxial layer corresponding to the first blue photodiode region.
Claims4
A method for manufacturing a CMOS image sensor, comprising:
- forming a first lightly doped P-type epitaxial layer on a heavily doped P-type semiconductor substrate;
- forming a gate electrode on the first epitaxial layer;
- forming a first N-type blue photodiode region on the first epitaxial layer;
- forming a second N-type epitaxial layer on the first epitaxial layer including the first blue photodiode region;
- and
- forming a second N-type blue photodiode region by patterning the second epitaxial layer to remain only on the first blue photodiode region.
A method for manufacturing a CMOS image sensor, comprising:
- forming a first lightly doped P-type epitaxial layer on a heavily doped P-type semiconductor substrate;
- forming a gate electrode on the first epitaxial layer;
- forming a first N-type blue photodiode region on the first epitaxial layer;
- forming a dielectric film on the first epitaxial layer including the first blue photodiode region;
- patterning the dielectric film to expose the first blue photodiode region;
- and
- forming a second blue photodiode region by forming a second N-type epitaxial layer on the first epitaxial layer corresponding to the first blue photodiode region.
Dependencies are inferred from the claim text.