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US 7,405,087 B2Granted
Magnetic memory device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsKentaro Nakajima, Keiji Hosotani
Life of this patent
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Abstract
A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which is connected to the magnetoresistive element and has a side surface that partially coincides with a side surface of the magnetoresistive element.
Claims11
A method of manufacturing a magnetic memory device, comprising:
- forming a contact in a first insulating film;
- sequentially forming a metal layer, a magnetoresistive film, and first and second mask layers on the first insulating film and the contact;
- patterning the second mask layer into an element shape of a magnetoresistive element;
- patterning the first mask layer into the element shape by using the patterned second mask layer;
- removing the patterned second mask layer;
- patterning the magnetoresistive film into the element shape by using the patterned first mask layer to form the magnetoresistive element;
- forming a resist on the first mask layer and the metal layer;
- patterning the resist to expose a first portion of the upper surface of the first mask layer and to cover a second portion of the upper surface of the first mask layer;
- patterning the metal layer using the patterned resist into a separation shape that separates cells and making a side surface of the metal layer partially coincide with a side surface of the magnetoresistive element opposite to the contact;
- and
- removing the patterned resist.
8 more elements
A method of manufacturing a magnetic memory device, comprising:
- forming a contact in a first insulating film;
- sequentially forming a metal layer, a magnetoresistive film, and first and second mask layers on the first insulating film and the contact;
- patterning the second mask layer into an element shape of a magnetoresistive element;
- patterning the first mask layer into the element shape by using the patterned second mask layer;
- removing the patterned second mask layer;
- patterning the magnetoresistive film into the element shape by using the patterned first mask layer to form the magnetoresistive element;
- forming a third mask layer on the first mask layer and the metal layer, the third mask layer being formed from an insulating layer;
- patterning the third mask layer to expose a first portion of the upper surface of the first mask layer and to cover a second portion of the upper surface of the first mask layer;
- patterning the metal layer using the patterned third mask layer into a separation shape that separates cells and making a side surface of the metal layer partly coincide with a side surface of the magnetoresistive element located opposite to the contact;
- and
- removing the patterned third mask layer.
8 more elements
Dependencies are inferred from the claim text.