Method for manufacturing resist pattern and method for manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising:

• discharging a first composition containing a first photosensitizer on a first conductive layer to form a plurality of first resist patterns under reduced pressure;
• exposing the plurality of first resist patterns by irradiation of light using a first photomask, the light having a photosensitive wavelength region of the first photosensitizer, wherein a first portion where the light is irradiated and a second portion where the light is not irradiated are formed in each of the plurality of first resist patterns;
• removing one of the first portion and the second portion by developing the plurality of first resist patterns to form a plurality of second resist patterns;
• etching the first conductive layer by using the plurality of second resist patterns as a mask to form a plurality of gate wirings and a plurality of gate electrodes over a substrate;
• photomask, the light having a photosensitive wavelength region of the third photosensitizer, wherein a fifth portion where the light is irradiated and a sixth portion where the light is not irradiated are formed in each of the plurality of fifth resist patterns;
• removing one of the fifth portion and the sixth portion by developing the plurality of fifth resist patterns to form a plurality of sixth resist patterns;
• etching the third conductive layer by using the plurality of sixth resist patterns as a mask to form a plurality of source wirings wherein said plurality of source wirings extend across said plurality of gate wirings;
• and
• removing the plurality of sixth resist patterns on the third conductive layer.

A method for manufacturing a semiconductor device comprising the steps of:

• discharging a composition on an object to form a plurality of first resist patterns under reduced pressure, the composition containing a photosensitizer;
• removing the plurality of second resist patterns on the first conductive layer;
• forming an insulating film over the plurality of gate wirings and the plurality of gate electrodes;
• forming a plurality of first semiconductor islands over the plurality of gate electrodes with said insulating film interposed therebeween;
• forming each of a plurality of channel protective layers over each of the plurality of first semiconductor islands;
• forming a plurality of second semiconductor islands over the plurality of first semiconductor islands with the plurality of channel protective layers interposed therebeween;
• discharging a second composition containing a second photosensitizer on a second conductive layer to form a plurality of third resist patterns under reduced pressure;
• exposing the plurality of third resist patterns by irradiation of light using a second photomask, the light having a photosensitive wavelength region of the second photosensitizer, wherein a third portion where the light is irradiated and a fourth portion where the light is not irradiated are formed in each of the plurality of third resist patterns;
• removing one of the third portion and the fourth portion by developing the plurality of third resist patterns to form a plurality of fourth resist patterns;
• etching the second conductive layer by using the plurality of fourth resist patterns as a mask to form a plurality of pixel electrodes arranged in a matrix form over the substrate;
• removing the plurality of fourth resist patterns on the second conductive layer;
• discharging a third composition containing a third photosensitizer on a third conductive layer to form a plurality of fifth resist patterns under reduced pressure;
• exposing the plurality of fifth resist patterns by irradiation of light using a third photomask, the
• exposing the plurality of first resist patterns with light using a photomask, wherein a first portion where the light is irradiated and a second portion where the light is not irradiated are formed in the first resist patterns;
• and
• removing one of the first portion and the second portion by developing the plurality of first resist patterns to form a plurality of second resist patterns.

A method for manufacturing a semiconductor device comprising the steps of:

• performing ink jetting on an object to form a plurality of first resist patterns under reduced pressure, wherein each of the plurality of first resist patterns is made of a composition containing a photosensitizer;
• exposing the plurality of first resist patterns with light using a photomask, wherein a first portion where the light is irradiated and a second portion where the light is not irradiated are formed in the first resist patterns;
• and
• removing one of the first portion and the second portion by developing the plurality of first resist patterns to form a plurality of second resist patterns.

A method for manufacturing a semiconductor device comprising the steps of:

• discharging a composition on an object at pressure in the range of 1×102 Pa to 2×104 Pa to form a plurality of first resist patterns, the composition containing a photosensitizer;
• exposing the plurality of first resist patterns with light using a photomask,wherein a first portion where the light is irradiated and a second portion where the light is not irradiated are formed in the first resist patterns;
• and
• removing one of the first portion and the second portion by developing the plurality of first resist patterns to form a plurality of second resist patterns.

A method for manufacturing a semiconductor device comprising the steps of:

• performing ink jetting at pressure in the range of 1×102 Pa to 2×104 Pa to form a plurality of first resist patterns on an object, wherein each of the plurality of first resist patterns is made of a composition containing a photosensitizer;
• exposing the plurality of first resist patterns with light using a photomask, wherein a first portion where the light is irradiated and a second portion where the light is not irradiated are formed in the first resist patterns;
• and
• removing one of the first portion and the second portion by developing the plurality of first resist patterns to form a plurality of second resist patterns.