Electrooptical device, method of manufacturing the same, and electronic equipment
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMasayuki Higuchi, Satoshi Murakami, Misako Nakazawa
Life of this patent
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Abstract
An AMLCD having high fineness and high contrast is realized. First, an interlayer film is provided on an element electrode, and an opening portion is formed in the interlayer film. Next, after a first metal layer is formed, an embedded insulating layer is formed. The embedded insulating layer is retreated by a means, such as an etch back method, to realize a state in which only the opening portion is filled with the embedded insulating layer. By this, electric connection between the element electrode and a second metal layer becomes possible while keeping the flatness.
Claims21
A method of manufacturing a semiconductor device, comprising:
- forming a first insulating layer over a substrate;
- forming an opening portion in the first insulating layer;
- forming a first conductive layer so as to cover the first insulating layer and the opening portion,
- wherein a recess portion of the first conductive layer is formed in the opening portion;
- forming a second insulating layer on the first conductive layer so as to form the second insulating film in the recess portion;
- etching the second insulating layer to expose at least a portion of the first conductive layer while keeping the second insulating layer remaining in the recess portion;
- and
- forming a second conductive layer over the first conductive layer and the second insulating layer so as to be in contact with the first conductive layer,
- wherein the second insulating layer comprises a pigment.
A method of manufacturing a semiconductor device, comprising:
- forming a first insulating layer over a substrate;
- forming an opening portion in the first insulating layer;
- forming a first conductive layer so as to cover the first insulating layer and the opening portion,
- wherein a recess portion of the first conductive layer is formed in the opening portion;
- forming a second insulating layer on the first conductive layer so as to form the second insulating film in the recess portion;
- etching the second insulating layer to expose at least a portion of the first conductive layer while keeping the second insulating layer remaining in the recess portion;
- and
- forming a second conductive layer over the first conductive layer and the second insulating layer so as to be in contact with the first conductive layer.
A method of manufacturing a semiconductor device comprising:
- forming a first insulating layer over a substrate;
- forming an opening portion in the first insulating layer;
- forming a first conductive layer so as to cover the first insulating layer and the opening portion,
- wherein a recess portion of the first conductive layer is formed in the opening portion;
- forming a second insulating layer on the first conductive layer so as to form the second insulating film in the recess portion;
- etching the second insulating layer to expose at least a portion of the first conductive layer while keeping the second insulating film remaining in the recess portion;
- and
- forming a second conductive layer over the first conductive layer and the second insulating layer so as to be in contact with the first conductive layer,
- wherein the second insulating layer comprises a carbon-based material.
Dependencies are inferred from the claim text.