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US 7,403,095 B2Granted
Thin film resistor structure and method of fabricating a thin film resistor structure
AssigneeTexas Instruments Incorporated
InventorsBrian Vialpando, Eric William Beach, Philipp Steinmann
Life of this patent
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Abstract
A thin film resistor structure and a method of fabricating a thin film resistor structure is provided. The thin film resistor structure includes an electrical interface layer or head layer that is a combination of a Titanium (Ti) layer and a Titanium Nitride (TiN) layer. The combination of the Ti layer and the TiN layer mitigates resistance associated with the electrical interface layers.
Claims8
A thin film resistor (TFR) structure comprising:
- a TFR;
- a first electrical interface portion directly coupled to a first end of the TFR;
- the first electrical interface portion comprising:
- a first layer of titanium (Ti) adjacent to the first end of the TFR, and
- a first layer of titanium nitride (TiN) formed on the first layer of Ti, wherein the first layers of Ti and TiN are located within a first opening formed in a first dielectric overlying the TFR;
- and
- a second electrical interface portion directly coupled to a second end of the TFR, the second electrical interface potion comprising:
- a second layer of Ti adjacent to the second end of the TFR, and
- a second layer of TiN formed on the second layer of Ti, wherein the second layers of Ti and TiN are located within a second opening formed in the first dielectric overlying the TFR;
- a second dielectric layer located on the first and second layers of TiN;
- a first contact extending through the second dielectric layer and contacting the first layer of TiN;
- and
- a second contact extending through the second dielectric layer and contacting the second layer of TiN.
10 more elements
Dependencies are inferred from the claim text.