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US 7,402,907 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorTatsuya Ohguro
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, an actuator provided above the semiconductor substrate to move upwardly, a first electrode layer which is moved by the actuator, and a cap portion provided above the first electrode layer and including a second electrode layer.
Claims11
A semiconductor device, comprising:
- a semiconductor substrate;
- an actuator provided above the semiconductor substrate to move upwardly;
- a first electrode layer which is moved by the actuator;
- and
- a cap portion provided above the first electrode layer, configured to seal the actuator and the first electrode layer, and including a second electrode layer which faces the first electrode layer,
- wherein a cavity is provided between the semiconductor substrate and the actuator.
3 more elements
Dependencies are inferred from the claim text.