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US 7,402,904 B2Granted
Semiconductor device having wires that vary in wiring pitch
AssigneeKabushiki Kaisha Toshiba
InventorsToshifumi Minami, Satoshi Oonuki
Life of this patent
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Abstract
A semiconductor device includes a first wiring layer having a first wiring pitch and a second wiring layer having a second wiring pitch that differs from the first wiring pitch. The device further includes a third wiring layer which connects the first wiring layer and the second wiring layer and has a wiring incident angle of less than 45 degrees to at least the first wiring layer.
Claims6
A semiconductor device comprising:
- a storage element section including a first wiring layer having a first wiring pitch;
- a control circuit section including a second wiring layer having a second wiring pitch that is broader than the first wiring pitch, the control circuit section controlling the storage element section;
- and
- a wiring section including a third wiring layer which is formed between the control circuit section and the storage element section to connect the first wiring layer and the second wiring layer, the third wiring layer having a wiring incident angle of less than 45 degrees to at least the first wiring layer.
1 more element
Dependencies are inferred from the claim text.