US 7,402,903 B2 · Semiconductor device

Abstract

Disclosed is a semiconductor device including: a semiconductor substrate; a plurality of diffusion layer patterns formed on the semiconductor substrate; an insulation film formed between the plural diffusion layer patterns on the semiconductor substrate; and a through plug formed to be partly surrounded by the insulation film without being in contact with the plural diffusion layer patterns and to pass through the insulation film and the semiconductor substrate. Further disclosed is a semiconductor device including: a semiconductor substrate; a plurality of diffusion layer patterns formed on the semiconductor substrate; an insulation film formed between the plural diffusion layer patterns on the semiconductor substrate; and a through plug formed to be partly surrounded by the diffusion layer pattern without being in contact with the insulation film and to pass through the diffusion layer pattern and the semiconductor substrate.

Claims22

Dependent claims

A semiconductor device comprising:

a semiconductor substrate;
a plurality of diffusion layer patterns formed on the semiconductor substrate;
an insulation film formed between the diffusion layer patterns on the semiconductor substrate to isolate the diffusion layer patterns from one another;
and
a through plug formed to have a side surface being in contact with one of the diffusion layer patterns, the side surface being surrounded by the one of the diffusion layer patterns without being in contact with the insulation film, and to pass through the one of the diffusion layer patterns and the semiconductor substrate.

2 more elements

A semiconductor device comprising:

a semiconductor substrate;
a plurality of diffusion layer patterns formed on the semiconductor substrate;
an insulation film formed between the diffusion layer patterns on the semiconductor substrate to isolate the diffusion layer patterns from one another;
a pattern portion formed above the diffusion layer patterns and/or the insulation film, the pattern portion using as a material thereof one kind selected from a group consisting of aluminum (Al), tungsten (W), titanium (Ti), copper (Cu), tantalum (Ta), and a chemical compound composed of at least one metal out of aluminum (Al), tungsten (W), titanium (Ti), copper (Cu), and tantalum (Ta);
and
a through plug formed to have a side surface being in contact with the insulation film, the side surface being surrounded by the insulation film without being in contact with the diffusion layer patterns, and to pass through the insulation film and the semiconductor substrate, the through plug being partly surrounded by the pattern portion above the diffusion layer patterns and/or the insulation film and being insulated from the pattern portion.

3 more elements

A semiconductor device comprising:

a plurality of semiconductor chips, at least one of the semiconductor chips including:
a semiconductor substrate;
a plurality of diffusion layer patterns formed on the semiconductor substrate;
an insulation film formed between the diffusion layer patterns on the semiconductor substrate to isolate the diffusion layer patterns from one another;
a pattern portion formed above the diffusion layer patterns and/or the insulation film, the pattern portion using as a material thereof one kind selected from a group consisting of aluminum (Al), tungsten (W), titanium (Ti), copper (Cu), tantalum (Ta), and a chemical compound composed of at least one metal out of aluminum (Al), tungsten (W), titanium (Ti), copper (Cu), and tantalum (Ta);
and
a through plug formed to have a side surface being in contact with the insulation film, the side surface being surrounded by the insulation film without being in contact with the diffusion layer patterns, and to pass through the insulation film and the semiconductor substrate, the through plug being partly surrounded by the pattern portion above the diffusion layer patterns and/or the insulation film and being insulated from the pattern portion, or a through plug formed to have a side surface being in contact with one of the diffusion layer patterns, the side surface being surrounded by the one of the diffusion layer patterns without being in contact with the insulation film, and to pass through the one of the diffusion layer patterns and the semiconductor substrate;
and
a connecting member electrically connecting the through plugs of the at least one of the semiconductor chips to at least one of the semiconductor chips.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims22