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US 7,402,898 B2Granted
Semiconductor package, method for fabricating the same, and semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHisaho Inao, Tatsuya Hirano, Katsutoshi Shimizu
Life of this patent
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Abstract
A semiconductor device includes a semiconductor chip, leads for sending and receiving signals between the semiconductor chip and an external device, fine metal wires, an encapsulant for sealing the leads, and a lid member. On the surface of each of the leads, a metal oxide film is formed by an oxidation treatment. The metal oxide film has a thickness larger than a natural oxide film and no more than 80 nm.
Claims4
A semiconductor package, comprising:
- a plurality of leads for sending and receiving signals between a semiconductor chip and an external device;
- and
- an encapsulant for sealing at least part of each of the plurality of leads,
- wherein a metal oxide film having a substantially uniform thickness in a range of no less than 1.7 nm and no more than 10 nm is formed on the entire surface of each of the plurality of leads,
- the plurality of leads are made of a Fe—Ni alloy, and
- the metal oxide film is an oxide film made of a Fe—Ni alloy.
3 more elements
A semiconductor device, comprising:
- a semiconductor chip;
- a plurality of leads for sending and receiving signals between the semiconductor chip and an external device;
- a connecting member for electrically connecting parts of the semiconductor chip to the plurality of leads;
- and
- an encapsulant for sealing at least part of each of the plurality of leads,
- wherein a metal oxide film having a substantially uniform thickness in a range of no less than 1.7 mn and no more than 10 nm is formed on the entire surface of each of the plurality of leads,
- the plurality of leads are made of a Fe—Ni alloy, and
- the metal oxide film is an oxide film made of a Fe—Ni alloy.
5 more elements
Dependencies are inferred from the claim text.