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US 7,402,891 B2Granted
Semiconductor polymers, method for the production thereof and an optoelectronic component
AssigneeOSRAM Opto Semiconductors GmbH
InventorsGünther Vogg, Martin Brandt, Martin Stutzmann
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Abstract
Layered germanium polymers that are semiconductive and demonstrate a strong red or infrared luminescence are produced through the topochemical conversion of calcium digermanide. Furthermore, silicon/germanium layer polymers can also be produced in this manner. These layer polymers can be produced epitaxially on substrates comprising crystalline germanium, and can be used to construct light-emitting optoelectronic components such as light-emitting diodes or lasers.
Claims32
A light emitting polymer material forming a crystal lattice, comprising:
- germanium or germanium-silicon polymers;
- wherein
- germanium atoms of the germanium polymers form surface planes of the crystal lattice or silicon atoms and germanium atoms of the germanium-silicon polymers form mixed surface planes of the crystal lattice, and said germanium or germanium-silicon polymers are layered on one another to form the crystal lattice;
- and
- the light emitting polymer material is capable of luminescing.
2 more elements
An optoelectronic component, comprising:
- a crystalline substrate;
- and
- a layered polymer material containing semiconductor atoms, the semiconductor atoms disposed in surface plane structures layered on top of one another, wherein the layered polymer material is produced by means of a topochemical conversion of Ca(Si1-xGex)2, 0<x≦1 on the crystalline substrate;
- the polymer material having an epitaxial orientation to the substrate.
1 more element
Dependencies are inferred from the claim text.