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US 7,402,880 B2Granted
Isolation layer for semiconductor devices and method for forming the same
AssigneeTexas Instruments Incorporated
InventorJason M. Neidrich
Life of this patent
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Abstract
According to one embodiment of the present invention, a semiconductor device includes a first layer of dielectric material disposed upon an upper surface of a substrate of the semiconductor device, a first layer of metal disposed upon an upper surface of the first layer of dielectric material, and a thick film anti-reflective layer having a thickness of at least about one micron disposed upon an upper surface of the first layer of metal.
Claims25
A digital micro-mirror device, comprising:
- a first layer of dielectric material disposed upon an upper surface of a CMOS substrate;
- a first layer of metal disposed upon an upper surface of the first layer of dielectric material;
- a thick film anti-reflective layer that is not a sacrificial layer and is disposed upon an upper surface of the first layer of metal, the thick film anti-reflective layer having a thickness of at least about one micron;
- a micro-mirror disposed above the thick film anti-reflective layer;
- and
- an electrode having an electrode post formed in the thick film anti-reflective layer and electrically coupled to the first layer of metal, the electrode operable to apply an electrostatic force to the micro-mirror.
3 more elements
An isolation method for a semiconductor device, comprising:
- disposing a first layer of dielectric material upon an upper surface of a substrate of the semiconductor device;
- disposing a first layer of metal upon an upper surface of the first layer of dielectric material;
- and
- disposing a thick film anti-reflective layer having a thickness of at least about one micron upon an upper surface of the first layer of metal,
- wherein the thick film anti-reflective layer is operative for optically isolating at least one of the first layer of the dielectric material and the first layer of metal from another portion of the semiconductor device.
2 more elements
A semiconductor device, comprising:
- a first layer of dielectric material disposed upon an upper surface of a substrate of the semiconductor device;
- a first layer of metal disposed upon an upper surface of the first layer of dielectric material;
- and
- a thick film anti-reflective layer having a thickness of at least about one micron disposed upon an upper surface of the first layer of metal,
- wherein the thick film anti-reflective layer optically isolates at least one of the first layer of the dielectric material and the first layer of metal from another portion of the semiconductor device.
2 more elements
A digital micro-mirror device, comprising:
- a first layer of dielectric material disposed upon an upper surface of a CMOS substrate;
- a first layer of metal disposed upon an upper surface of the first layer of dielectric material;
- a thick film anti-reflective layer disposed upon an upper surface of the first layer of metal, the thick film anti-reflective layer having a thickness of at least about one micron;
- an etch stop layer disposed on at least a portion of an upper surface of the thick film anti-reflective layer;
- a micro-mirror disposed above the etch stop layer;
- and
- an electrode having an electrode post formed in the thick film anti-reflective layer and electrically coupled to the first layer of metal, the electrode operable to apply an electrostatic force to the micro-mirror.
4 more elements
Dependencies are inferred from the claim text.