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US 7,402,875 B2Granted
Lateral undercut of metal gate in SOI device
AssigneeIntel Corporation
InventorsSuman Datta, Justin K. Brask, Jack Kavalieros, Brian S. Doyle, Gilbert Dewey, Mark L. Doczy, Robert S. Chau
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Abstract
Embodiments of the invention provide a device with a metal gate, a high-k gate dielectric layer, source/drain extensions a distance beneath the metal gate, and lateral undercuts in the sides of the metal gate.
Claims16
A semiconductor device, comprising:
- a first semiconductor substrate;
- an insulator layer on the semiconductor substrate;
- a second semiconductor layer on the insulator layer;
- a dielectric layer on the second semiconductor layer;
- and
- a metal layer on the dielectric layer, wherein the metal layer includes curved lateral undercuts that are deepest around a center of the metal layer's thickness and that taper off towards a top and a bottom surface of the metal layer so the metal layer has an effective length less than a length of the dielectric layer.
3 more elements
A semiconductor device, comprising:
- a first semiconductor layer;
- an insulating layer on the semiconductor substrate;
- a second semiconductor layer on the insulator layer;
- a dielectric layer on the second semiconductor layer;
- a metal gate on the dielectric layer, wherein the metal gate has curved lateral undercuts extending into a center of the metal gate's thickness and tapering off towards a top and a bottom surface of the metal gate, wherein each lateral undercut has a depth laterally measured from an outermost edge of the metal gate to a greatest depth of the lateral undercut;
- source and drain regions of the second semiconductor layer on either side of the metal gate, wherein the source and drain regions have extensions that go a lateral depth under the metal gate measured from the outermost edge of the metal gate to a furthest depth of the extension;
- and
- wherein the depth of the lateral undercuts is less than the depth of the source and drain region extensions.
5 more elements
Dependencies are inferred from the claim text.