Semiconductor device having resistor and method of fabricating the same

A method of fabricating a semiconductor device comprising:

• forming a lower interlayer insulating layer on a semiconductor substrate having a cell region and a peripheral region;
• forming a buffer conductive layer on the lower interlayer insulating layer;
• patterning the buffer conductive layer, thereby forming a buffer pad on the lower interlayer insulating layer in the cell region, and concurrently, forming a lower resistor on the lower interlayer insulating layer in the peripheral region;
• forming a storage node electrode on the buffer pad;
• sequentially forming a dielectric and a conductive layer on the surface of the semiconductor substrate having the storage node electrode;
• patterning the conductive layer and the dielectric, thereby forming a capacitor dielectric and a plate electrode in the cell region, and concurrently, forming an inter-resistor insulating layer and an upper resistor, which are sequentially stacked, to expose both ends of the lower resistor in the peripheral region;
• forming an upper interlayer insulating layer on the surface of the semiconductor substrate having the plate electrode and the upper resistor;
• forming a resistor contact plug in the upper interlayer insulating layer so as to be electrically connected to a first end of the lower resistor and a first end of the upper resistor;
• and
• forming a resistor interconnection line on the upper interlayer insulating layer to contact the resistor contact plug.