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US 7,402,853 B2Granted
BST integration using thin buffer layer grown directly onto SiO2/Si substrate
AssigneeMassachusetts Institute of Technology
InventorsIl-Doo Kim, Ytshak Avrahami, Harry L. Tuller
Life of this patent
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Abstract
A BST microwave device includes a substrate and an insulating layer that is formed on the substrate. A buffer layer is formed on the insulating layer. A BST layer is formed on the buffer layer with a selected orientation for high tunability and possesses a low loss in a wavelength of interest.
Claims15
A BST microwave device comprising:
- a substrate;
- an insulating layer having a thickness of 2 μm that is formed on said substrate;
- a buffer layer that is formed on said insulating layer;
- and
- a BST layer that is directly formed on said buffer layer with a selected orientation for high tunability and possess a low loss in a wavelength of interest.
2 more elements
A method of forming a BST microwave device comprising:
- providing a substrate;
- forming an insulating layer having a thickness of 2 μm thick that is formed on said substrate;
- forming a buffer layer on said insulating layer;
- and
- forming a BST layer directly on said buffer layer with a selected orientation for high tunability and possess a low loss in a wavelength of interest.
2 more elements
Dependencies are inferred from the claim text.