Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHorii Hideki, Bong-Jin Kuh, Yong-Ho Ha, Jeong-hee Park, Ji-Hye Yi
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Abstract
Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that may include nitrogen atoms and/or silicon atoms. First and second electrodes are electrically connected to the phase-changeable material pattern and provide an electrical signal thereto. The phase-changeable material pattern may have a polycrystalline structure.
Claims19
A phase-changeable integrated circuit memory device, comprising:
- a semiconductor substrate;
- a phase-changeable material on the semiconductor substrate, wherein the phase-changeable material includes silicon atoms, and wherein the silicon atoms included in the phase-changeable material comprise from about 0.1% to about 15% by atomic percentage;
- and
- a first electrode electrically coupled to the phase-changeable material.
A phase-changeable integrated circuit memory device, comprising:
- a phase-changeable material, wherein the phase-changeable material includes silicon atoms, and wherein the silicon atoms included in the phase-changeable material comprise from about 0.1% to about 15% by atomic percentage;
- and
- a first electrode electrically coupled to the phase-changeable material,
- wherein the phase-changeable material further comprises nitrogen atoms, and wherein the nitrogen atoms included in the phase-changeable material are from about 0.1% to about 20% by atomic percentage.
A phase-changeable integrated circuit memory device, comprising:
- a phase-changeable material, wherein the phase-changeable material includes silicon atoms, wherein the silicon atoms included in the phase-changeable material comprise from about 0.1% to about 15% by atomic percentage, and wherein the phase-changeable material comprises (TeaSbbGe100-(a+b))nSi100-n, wherein a≦80, 5≦b≦50, 85≦n≦99.9, where a,b and 100-(a+b) are atomic percentages with respect to the TeSbGe composition and n and 100-n are atomic percentages with respect to the total composition;
- and
- a first electrode electrically coupled to the phase-changeable material.
A phase-changeable integrated circuit memory device, comprising:
- a phase-changeable material, wherein the phase-changeable material includes silicon atoms, and wherein the silicon atoms included in the phase-changeable material comprise from about 0.1% to about 15% by atomic percentage;
- and
- a first electrode electrically coupled to the phase-changeable material,
- wherein the phase-changeable material further comprises nitrogen atoms, and wherein the phase-changeable material comprises (TeaSbbGe100-(a+b))nSicN100(n+c), wherein a≦80, 5≦b≦50, 0.25≦c≦8 90≦n≦99.75, where a,b and 100-(a+b) are atomic percentages with respect to the TeSbGe composition and n, c and 100-(n+c) are atomic percentages with respect to the total composition.
A phase-changeable integrated circuit memory device, comprising:
- a phase-changeable material, wherein the phase-changeable material includes silicon atoms, and wherein the silicon atoms included in the phase-changeable material comprise from about 0.1% to about 15% by atomic percentage;
- and
- a first electrode electrically coupled to the phase-changeable material,
- wherein the phase-changeable material further comprises nitrogen atoms, and wherein the phase-changeable material comprises (TeaSbbGe100-(a+b))nSicN100-(n+c), wherein a≦80, 5≦b≦50, 0.1≦c≦15, 80≦n≦99.9, where a,b and 100-(a+b) are atomic percentages with respect to the TeSbGe composition and n, c and 100-(n+c) are atomic percentages with respect to the total composition.
A phase-changeable integrated circuit memory device, comprising:
- a phase-changeable material, wherein the phase-changeable material includes silicon atoms, wherein the silicon atoms included in the phase-changeable material comprise from about 0.1% to about 15% by atomic percentage, and wherein the phase-changeable material comprises AxB100-x, wherein component A is tellurium, selenium, sulfur, and/or polonium and component B is antimony, arsenic, germanium, tin, phosphorus, silver, oxygen, indium and/or bismuth and wherein x≦80 and x and 100-x are atomic percentages;
- and
- a first electrode electrically coupled to the phase-changeable material.
A phase-changeable integrated circuit memory device, comprising:
- a semiconductor substrate;
- a phase-changeable material on the semiconductor substrate and doped with silicon atoms of about 0.1% to about 15% by atomic percentage;
- and
- a first electrode and a second electrode electrically coupled to the phase-changeable material.
A phase-changeable integrated circuit memory device, comprising:
- a phase-changeable material doped with silicon atoms of about 0.1% to about 15% by atomic percentage, wherein the phase-changeable material is further doped with nitrogen atoms to a level in a range between about 0.1% and about 20% by atomic percentage;
- and
- a first electrode and a second electrode electrically coupled to the phase-changeable material.
Dependencies are inferred from the claim text.