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US 7,402,843 B2Granted
Group III-V compound semiconductor and group III-V compound semiconductor device using the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorToshikazu Onishi
Life of this patent
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Abstract
An AlGaInP layer is formed on a substrate made of GaAs, and an AlGaAs layer is formed on the AlGaInP layer via a buffer layer therebetween. The buffer layer has a thickness of about 1.1 nm and is made of AlGaInP whose Ga content is smaller than that of the AlGaInP layer. The buffer layer may alternatively be made of AlGaAs whose Al content is smaller than that of the AlGaAs layer.
Claims25
A group III-V compound semiconductor device, comprising:
- a first semiconductor layer made of AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, 0≦a+b≦1);
- a second semiconductor layer made of AlxGayIn1-x-yP (where 0≦x≦1, 0≦y≦1, 0≦x+y≦1) formed on the first semiconductor layer;
- and
- a third semiconductor layer made of AlcGa1-cAs (where 0≦c≦1) formed in contact with the second semiconductor layer,
- wherein
- a Ga content y in the second semiconductor layer is smaller than a Ga content b in the first semiconductor layer,
- the second semiconductor layer is provided between the first semiconductor layer and the third semiconductor layer, and
- the Ga content y is less than 0.15.
5 more elements
A group III-V compound semiconductor device, comprising:
- a first semiconductor layer made of AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, 0≦a+b≦1);
- a second semiconductor layer made of AlzGa1-zAs (where 0≦z≦1) formed on the first semiconductor layer;
- and
- a third semiconductor layer made of AlcGa1-cAs (where 0≦c≦1) formed in contact with the second semiconductor layer,
- wherein the second semiconductor layer is provided between the first semiconductor layer and the third semiconductor layer,
- an Al content z in the second semiconductor layer is smaller than an Al content c in the third semiconductor layer, and
- an Al content c in the third semiconductor layer is 0.3 or less.
4 more elements
Dependencies are inferred from the claim text.