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US 7,402,834 B2Granted
Field-effect transistor substantially consisting of organic materials
AssigneePolymer Vision Limited
InventorsCornelius M. J. Mutsaers, Dagobert M. De Leeuw, Christopher J. Drury
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Abstract
An organic field-effect transistor is disclosed in which an insulating layer having a thickness of 0.3 m or less is provided on a substantially planar electrode layer. This transistor has a channel length down to 2 m, satisfying the condition for voltage amplification well below 10V, and has an on/off ratio of about 25.
Claims4
An integrated circuit comprising:
- a top gate field-effect transistor comprising a stack of:
- an organic first electrode layer accommodating a source electrode and a drain electrode and having a patchwork pattern of electrically conducting areas and electrically insulating areas;
- an organic semiconducting layer on the organic first electrode layer;
- an organic electrically insulating layer on the organic semiconducting layer, and
- an organic second electrode layer, accommodating a gate electrode, on the organic electrically insulating layer,
- wherein the thickness of the organic electrically insulating layer is greater than the thickness of the first and/or second electrode layer but less than 0.3 μm.
3 more elements
A top gate field-effect transistor comprising a stack of:
- an organic first electrode layer accommodating a source electrode and a drain electrode and having a patchwork pattern of electrically conducting areas and electrically insulating areas;
- an organic semiconducting layer on the organic first electrode layer;
- an organic electrically insulating layer on the organic semiconducting layer, and
- an organic second electrode layer, accommodating a gate electrode, on the organic electrically insulating layer, wherein the thickness of the organic electrically insulating layer is greater than the thickness of the first and/or second electrode layer but less than 0.3 μm.
1 more element
Dependencies are inferred from the claim text.