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US 7,402,832 B2Granted
Quantum dots of group IV semiconductor materials
AssigneeUltraDots, Inc.
InventorHoward Wing Hoon Lee
Life of this patent
Estimating the term…
Abstract
The invention relates to a quantum dot. The quantum dot comprises a core including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell surrounding the core. The quantum dot is substantially defect free such that the quantum dot exhibits photoluminescence with a quantum efficiency that is greater than 10 percent.
Claims8
A quantum dot comprising:
- a) a core that is crystalline and including Ge;
- and
- b) a shell that is inorganic and noncrystalline and including GeOn with n between approximately 1.5 and 2, said shell surrounding said core and having a thickness greater than one monolayer of GeOn and up to ten monolayers of GeOn,
- said quantum dot exhibits photoluminescence with a quantum efficiency that is at least 40 percent.
1 more element
Dependencies are inferred from the claim text.