Photoelectric conversion device and method of manufacturing the device

A photoelectric conversion device comprising:

• a substrate serving as a lower electrode;
• first conductivity-type crystalline semiconductor particles formed on the substrate;
• second conductivity-type semiconductor layers formed on the crystalline semiconductor particles;
• an insulator layer formed among the crystalline semiconductor particles;
• and
• an upper electrode layer formed on the second conductivity-type semiconductor layers,
• wherein the second conductivity-type semiconductor layers include an impurity element with a concentration decreasing with proximity to the crystalline semiconductor particles, wherein the impurity element comprises one element selected from the group consisting of nitrogen, carbon, and hydrogen.

A method of manufacturing a photoelectric

• conversion device comprising the steps of:
• depositing first conductivity-type crystalline semiconductor particles on a substrate serving as a lower electrode;
• forming second conductivity-type semiconductor layers on the crystalline semiconductor particles so that at least one element selected from the group consisting of nitrogen, carbon and hydrogen is included in the semiconductor layers with a concentration increasing with thickness;
• forming an insulator layer among the crystalline semiconductor particles;
• and
• forming an upper electrode layer on the second conductivity-type semiconductor layers.

A photoelectric conversion device comprising:

• a first electrode;
• a semiconductor region electrically connected to the first electrode;
• the semiconductor region comprising
• a first conductivity-type semiconductor region having a three dimensional curved surface;
• and
• a second conductivity-type semiconductor region surrounding at least a part of the curved surface;
• and
• a second electrode electrically connected to the second conductivity-type semiconductor region,
• wherein the second conductivity-type semiconductor region includes an impurity element comprising at least one element selected from the group consisting of nitrogen, carbon and hydrogen, wherein the impurity element has a lower concentration with proximity to the first conductivity-type semiconductor region than with proximity to the second electrode.