US 7,402,621 B2 · Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device

Abstract

The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method. In addition, provided is a method of forming a porous film comprising steps of preparing a porous-film-forming composition by preparing Component A, imparting crosslinkability to Component A and adding a crosslinkability inhibitor to temporarily terminate the crosslinkability; applying the porous-film-forming composition onto a substrate to form a film, drying the film, crosslinking the particles along with removing the crosslinkability inhibitor by heating the dried film.

Claims6

Dependent claims

A method for preparing a composition for forming a porous film comprising the steps of:

a) preparing Component (A), wherein Component (A) is selected from the group consisting of polysiloxane, silica, and zeolite particles;
b) imparting crosslinkability to Component (A);
and
c) temporarily terminating the crosslinkability of Component (A),
wherein the step of preparing component (A) takes place in the presence of a basic catalyst or a basic substance,
the step of imparting crosslinkability to Component (A) comprises addition of Component (B), which comprises at least one organosilicon compound,
the step of temporarily terminating the crosslinkability of Component (A) comprises addition of a carboxylic acid having at least two carboxyl groups in the molecule thereof,
and the step of temporarily tenninating the crosslinkability of Component (A) takes place within one hour after the step of imparting crosslinkability to component (A).

5 more elements

A method for forming a porous film, comprising:

preparing a composition for forming said porous film according to a method comprising the steps of:
a) preparing Component (A), wherein Component (A) is selected from the group consisting of polysiloxane, silica, and zeolite particles;
b) imparting crosslinkability to Component (A);
and
c) temporarily terminating the crosslinkability of Component (A);
applying said composition to a substrate to form a film;
drying the film;
and
resuming the crosslinkability of Component (A) by heating the dried film,
wherein the step of preparing component (A) takes place in the presence of a basic catalyst or a basic substance,
the step of imparting crosslinkability to Component (A) comprises addition of Component (B), which comprises at least one organosilicon compound,
the step of temporarily terminating the crosslinkability of Component (A) comprises addition of a carboxylic acid having at least two carboxyl groups in the molecule thereof,
and the step of temporarily terminating the crosslinkability of Component (A) takes place within one hour after the step of imparting crosslinkability to component (A).

10 more elements

Dependencies are inferred from the claim text.

Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device

Life of this patent

Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device

Life of this patent

Abstract

Claims6