Single electron devices formed by laser thermal annealing
AssigneeAdvanced Micro Devices, Inc.
InventorZoran Krivokapic
Life of this patent
Estimating the term…
Abstract
A semiconductor device with a superlattice and method of making same includes forming a layer of amorphous silicon over a substrate, and forming a layer of nanocrystals by laser thermal annealing the layer of amorphous silicon. A gate dielectric is formed between the layer of amorphous silicon and the substrate. A dielectric layer is formed on the layer of amorphous silicon. The steps of forming the layer of amorphous silicon and forming the dielectric layer can be repeated. The thickness of the dielectric layer is between about 25 to 40 angstroms, and the thickness of the amorphous silicon layer is between about 30 to 50 angstroms. The average diameter of the nanocrystals is less than 40 angstroms.
Claims12
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a gate dielectric over a channel region in a substrate;
- forming a layer of amorphous silicon over the gate dielectric;
- forming a layer of nanocrystals by laser thermal annealing the layer of amorphous silicon;
- forming a dielectric layer on the layer of amorphous silicon;
- and
- repeating the steps of forming the layer of amorphous silicon and forming the dielectric layer.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a gate dielectric on a substrate;
- forming a first layer of amorphous silicon on the gate dielectric;
- forming a first dielectric layer on the first layer of amorphous silicon;
- forming a first layer of silicon nanocrystals by laser thermal annealing the first layer of amorphous silicon;
- forming a second layer of amorphous silicon on the first dielectric layer;
- forming a second dielectric layer on the second layer of amorphous silicon;
- and
- forming a second layer of nanocrystals by laser thermal annealing the second layer of amorphous silicon, wherein
- an average diameter of the nanocrystals is less than 40 angstroms.
A semiconductor device, comprising:
- a substrate;
- a gate dielectric formed on the substrate;
- at least one superlattice of silicon nanocrystals formed over the gate dielectric;
- and
- a dielectric layer formed on each layer of nanocrystals, wherein
- an average diameter of the nanocrystals is less than 40 angstroms.
A semiconductor device, comprising:
- a substrate;
- a superlattice structure, the superlattice structure including:
- a dielectric layer, and
- a silicon layer with nanocrystals having an average diameter less than 30 angstroms;
- and
- gate material disposed over the superlattice structure.
Dependencies are inferred from the claim text.