Epitaxial semiconductor deposition methods and structures
AssigneeASM America, Inc.
InventorsPaul D. Brabant, Joseph P. Italiano, Chantal J. Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer
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Abstract
Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.
Claims23
A method for forming a protective silicon cap layer on a germanium-containing structure, the method comprising:
- providing a single crystal germanium-containing structure;
- providing a flow of trisilane to the germanium-containing structure;
- and
- depositing the protective silicon cap layer on the germanium-containing structure at a deposition temperature between about 325° C. and about 475° C.
A method of preventing agglomeration of germanium, the method comprising:
- epitaxially depositing a silicon cap layer over a germanium-containing structure;
- and
- providing a silicon precursor to the germanium-containing structure at a deposition temperature between about 325° C. and about 475° C.
Dependencies are inferred from the claim text.