Method of manufacturing a coaxial trace in a surrounding material, coaxial trace formed thereby, and semiconducting material containing same

A method of manufacturing a coaxial trace in a semiconducting material, the method comprising:

• providing a first semiconducting substrate and a second semiconducting substrate;
• for both the first semiconducting substrate and the second semiconducting substrate:
• forming a mask layer on the semiconducting substrate;
• patterning and etching the mask layer using a photoresist layer in order to expose a portion of the semiconducting substrate;
• removing the photoresist layer;
• etching the portion of the semiconducting substrate in order to form a trench in the semiconducting substrate;
• removing the mask layer;
• forming a first dielectric layer in the trench;
• forming a first electrically conducting layer over the first dielectric layer;
• forming a second dielectric layer over the first electrically conducting layer;
• and
• forming a second electrically conducting layer over the second dielectric layer such that the trench is substantially full;
• aligning the first semiconducting substrate and the second semiconducting substrate to each other;
• and
• bonding the first semiconducting substrate and the second semiconducting substrate to each other.