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US 7,402,497 B2Granted
Transistor device having an increased threshold stability without drive current degradation
AssigneeAdvanced Micro Devices, Inc.
InventorsAndy Wei, Thorsten Kammler, Jan Hoentschel, Manfred Horstmann
Life of this patent
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Abstract
By removing a portion of a halo region or by avoiding the formation of the halo region within the extension region, which may be subsequently formed on the basis of a re-grown semiconductor material, the threshold roll off behavior may be significantly improved, wherein an enhanced current drive capability may simultaneously be achieved.
Claims19
A method, comprising:
- forming a recess adjacent to a channel region of a field effect transistor;
- forming a doped region in said recess by an epitaxial growth process, said doped region comprising a first dopant species of a first conductivity type;
- replacing a portion of said doped region by a semiconductor material;
- and
- introducing a second dopant species of a second conductivity type other than said first conductivity type into said semiconductor material so as to form a PN junction with said first dopant species adjacent to said channel region.
2 more elements
A method, comprising:
- forming a recess in a crystalline semiconductor region so as to extend below an etch mask formed above said crystalline semiconductor region;
- forming a doped region extending below said etch mask by a selective epitaxial growth process, said doped region comprising a first dopant species of a first conductivity type;
- removing a portion of said doped semiconductor region by an anisotropic etch process;
- and
- forming a semiconductor material in said recess after removing said portion of said doped semiconductor region, said semiconductor material comprising a second dopant species of a second conductivity type other than said first conductivity type, said first and second dopant species forming a PN junction.
2 more elements
A semiconductor device, comprising:
- a gate electrode structure formed above a channel region;
- a drain region and a source region formed in a recess, a first portion of the recess adjacent the channel region being lined by a first doped region, and a second portion of the recess adjacent the first portion being lined and filled by a semiconductor material without being lined by the first doped region, the first doped region comprising an epitaxially-grown material including a first dopant species of a first conductivity type and being disposed adjacent said channel region, the semiconductor material comprising a second dopant species of a second conductivity type other than said first conductivity type, said first and second dopant species forming a PN junction adjacent to said channel region in said first portion, said drain and source regions having a low resistance region of reduced concentration of counter-doping in said second portion compared to a concentration of counter-doping at said PN junction;
- and
- a metal silicide region formed in said drain and source regions, said metal silicide region connecting to said low resistance region.
1 more element
A method, comprising:
- forming a recess in a crystalline semiconductor region so as to extend below an etch mask formed above said crystalline semiconductor region;
- forming within said recess under said etch mask a doped sacrificial layer including a first dopant species of a first conductivity type;
- heat treating said doped sacrificial layer to drive a portion of said first dopant species into said crystalline semiconductor region to define a doped region extending below said etch mask;
- removing said doped sacrificial layer;
- and
- forming a semiconductor material in said recess, said semiconductor material comprising a second dopant species of a second conductivity type other than said first conductivity type, said first and second dopant species forming a PN junction.
3 more elements
Dependencies are inferred from the claim text.