Back to results
US 7,402,493 B2Granted
Method for forming non-volatile memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Woo Oh, Dong-Gun Park, Dong-Won Kim, Yong-Kyu Lee
Life of this patent
Estimating the term…
Abstract
According to a nonvolatile memory device having a multi gate structure and a method for forming the same of the present invention, a gate electrode is formed using a damascene process. Therefore, a charge storage layer, a tunneling insulating layer, a blocking insulating layer and a gate electrode layer are not attacked from etching in a process for forming the gate electrode, thereby forming a nonvolatile memory device having good reliability.
Claims23
A method for forming a semiconductor memory device comprising:
- forming a semiconductor fin that is connected to a semiconductor substrate and includes a hole;
- forming a tunneling insulating layer on both sides and a top surface of the semiconductor fin over the hole, sides of the semiconductor fin under the hole and inner surfaces of the semiconductor fin that are defined by the hole;
- forming a charge storage layer on the tunneling insulating layer;
- forming a blocking insulating layer on the charge storage layer;
- and
- forming a gate electrode layer on the blocking insulating layer.
3 more elements
Dependencies are inferred from the claim text.